Figure 3

Magnetic field dependence of the components of the resistivity tensor for a typical 2DEG heterostructure (InGaAs/InP) at \(\pmb{T=4~\mbox{K}}\) . For magnetic fields greater than 1.5 T, the resistivity develops plateau regions characteristic of the quantum Hall regime, where \(\rho_{xy}\) is constant and the diagonal element \(\rho_{xx}\) goes to zero. This data shows negligible evidence of the fractional quantum Hall effect.