Atom numbers | |
Single 87Rb BEC | ≥1 × 106 |
Single 41K BEC | ≥1 × 105 |
Dual-species BEC of 87Rb and 41K (respectively) | ≥1 × 105, ≥1 × 104 |
Trapped 85Rb atoms | ≥1 × 106 |
Trapped 39K atoms | ≥1 × 105 |
Trapped 40K atoms | ≥1 × 104 |
Atom trapping and manipulation | |
Magnetic traps: available structures | Atom chip and four pairs of coils |
Crossed optical dipole trap: wavelength, beam waist, total power | 1064(10) nm, 100(20) μm, 300 mW |
Optical lattice | Switchable retro-reflection of the beams of the crossed optical dipole trap |
Painted potentials: barrier height, sizes of rings, total power | 5 μK with contour length ≤ 100 μm and refresh rate ≥100 Hz, inner diameter 20 μm to 1500 μm and outer diameter 40 μm to 2000 μm, 50 mW optical power at 764 nm |
Life times of single species clouds: non-trapped, magnetically, and optically trapped (respectively) | ≥10 s, ≥3 s, ≥10 s |
Feshbach-field | ≥175 G with tunable modulation of up to 1 G at ≥0.1 kHz |
Transport of atoms away from the chip | 0.1Â mm to 2Â mm |
Minimum expansion velocity for 87Rb, 41K, and 87Rb-41K mixtures after atomic lensing | ≤100 μm s−1 |
Two independent radio-frequency sources | 0.1 MHz to 25 MHz with Rabi frequency ≥10 kHz and ramp rates ≥100 MHz s−1 |
Microwave generator | 6.835 GHz, 3.036 GHz, 1285 MHz, 462 MHz and 254 MHz adjustable with 30 MHz around the central frequency, Rabi frequency ≥10 kHz and ramp rates ≥100 MHz s−1 |
Atom interferometry, two independent axes | |
Primary axis | parallel to Earth’s acceleration (nadir) and parallel to the chip surface |
Total free evolution time | ≥2T = 2.6 s |
Raman diffraction beams | splitting efficiency ≥ 90%, \(1/e^{2}\) beam diameter ≥ 6 mm, Rabi frequency 1 kHz to 50 kHz, detuning adjustable 1 GHz to 5 GHz, homogeneous magnetic field of 0.05 G to 1 G, power of 15 mW (70 mW) per frequency component in primary axis (secondary axis) |
Rotation compensation | retro-reflection mirror on tip-tilt stage for rotation compensation of ISS for times ≥2T = 2.6 s (≥3 mrad) |
Coupling with external sensors | rotation sensor with noise floor ≤ 50 μrad s−1/\(\sqrt{\mathrm{Hz}}\) |
Secondary axis | perpendicular to the orbital plane and perpendicular to the chip surface |
Two orthogonal, species selective, spatially resolved absorption detection systems | |
Spatial resolution | ≤10 μm |
Field of view | ≥10 mm2 |
Scanning range of focal plane | ≥10 mm, |
Adjustable depth of field | 100 μm to 2000 μm |
Fluorescence detection | single axis, species selective |
Miscellaneous | Â |
Multiple surfaces with different electrical properties on the atom chip | size ≥ 1 mm2 |