Figure 4

Anomalous diffraction probability of selected optimal designs of Figs. 3(a) and 3(b) (\(b=2.5\text{ nm}\)) as function of the angle of impinging electrons θ and their kinetic energy E. Only results at combinations \((\theta ,E)\) leading to exactly one anomalous diffraction order (\(u=-1\)) are shown. (a) \(\rho _{-1}\) for optimal InP inclusions in BeTe background (Fig. 3(a), quantum well, \(a/b=0.40\), \(k_{0}a\cong 1.32\)), (b) \(\rho _{-1}\) for optimal CdO inclusions in InSb background (Fig. 3(a), quantum barrier, \(a/b=0.36\), \(k_{0}a\cong 1.39\)), (c) \(\tau _{-1}\) for optimal CdTe inclusions in AlN background (Fig. 3(b), quantum well, \(a/b=0.28\), \(k_{0}a\cong 1.19\)), (d) \(\tau _{-1}\) for optimal SiC inclusions in diamond background (Fig. 3(b), quantum well, \(a/b=0.36\), \(k_{0}a\cong 1.63\))