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Figure 11 | EPJ Quantum Technology

Figure 11

From: Semiconductor-based electron flying qubits: review on recent progress accelerated by numerical modelling

Figure 11

Electrostatic potential landscape. (a) Scanning electron micrograph of the entrance of a tunnel-coupled region. Adapted from Ref. [31]. (b) Electrostatic potential induced at the 2DEG from 3D simulations using realistic gate geometries (fainted black layout) and typical voltage values applied to the electrostatic gates. Equipotential lines are shown as continuous lines. Vertical cuts (blue and red) show the double-well potential before and within the tunnel-coupled region. The black line represents the path which follows the minimum in the potential landscape

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