Figure 12
nextnano simulations of the electron partial local density of states in the tunnel-coupled wire (TCW: panels (a-e)) and the TCW – Aharonov–Bohm interferometer – TCW nanodevice (TCW–AB–TCW: panels (f-j)). Both devices are connected to four terminals (marked by white numbers). The background shows the potential landscape defined by the voltage on the surface gates, cf. Fig. 13(a,d). The electron with a given energy (\(E = 9.2\text{ meV}\) for TCW and \(E = 7.5\text{ meV}\) for TCW–AB–TCW) is always injected into the upper incoming channel from the 1st lead, \(|0\rangle \) state. The states at the output leads are indicated at the top of each panel and explained in the main text. Panels (a-e): the pLDoS in TCW for increasing the tunneling barrier voltage (described by \(V_{\mathrm{T}} \)). Panels (f-j): the pLDoS in TCW–AB–TCW for increasing voltage on a side gate of the bottom path (described by \(V_{\mathrm{g}} \))